Enhancement of Thermal Characteristics and On-Current in GAA MOSFET by Utilizing Al2O3-Based Dual-? Spacer Structure

초록

By utilizing the dual-kappa spacer (DS) technique, a novel structure has been proposed to improve the ther-mal characteristics and ON-current (I-ON) in gate-all-around (GAA) MOSFETs. The proposed GAA MOSFET structure utilizes DS, which contains aluminum oxide (Al2O3) as an inner spacer so that the self-heating effect (SHE) could be improved from the high thermal conductivity of Al2O3. To verify the proposed device structure, 3-D technology computer-aided design (TCAD) simulation has been per-formed through Synopsys Sentaurus tool. As a result, when the DS structure and Al2O3 are utilized in GAA MOSFET, the maximum lattice temperature (T-max) is improved from 628 to 509 K, and the thermal resistance (R-th) is improved by 49%. According to this thermal improvement, I-ON and OFF-current (I-OFF) are also simultaneously improved in the proposed GAA MOSFET. Furthermore, since Al2O3 has lower permit-tivity than HfO2, the gate capacitance (C-gate) could also be improved in the proposed GAA MOSFET. In essence, the proposed GAA MOSFET structure utilizes high thermal conductivity and low permittivity of Al(2)O(3 )with DS structure.

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