Analysis of Transient Response of Negative Capacitance Field-Effect Transistor

초록

This study investigates the impact of ferroelectric polarization switching delay on the transient characteristics of negative capacitance field-effect transistors (NCFETs) and their corresponding logic circuit performance by using technology computer-aided design (TCAD) simulation. As the ferroelectric switching delay increases, the polarization fails to respond effectively to high-speed input signals, thereby weakening the negative capacitance effect. This incomplete polarization response results in a degradation of the subthreshold swing and a noticeable shift in the threshold voltage during high-speed operation of the NCFET, which are critical for low power device operation. These device level degradations further propagate to the circuit level, where they manifest as reduced noise margins, distorted voltage transfer characteristics and increased switching delay. Such degradation can significantly undermine the stability and speed of NCFET-based logic circuits, particularly under high-speed operation. The results highlight that the intrinsic delay of the ferroelectric layer plays a critical role in determining the performance and reliability of NCFET-based high-speed logic circuits.

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