One-Ferroelectric-Tunnel-FET-Based Reconfigurable Logic Gates

초록

A novel reconfigurable logic gate (RLG) utilizing one ferroelectric tunnel field-effect transistor (FeTFET) is proposed for the first time. By leveraging the symmetric ambipolar current of the TFET and the minor loop behavior of the ferroelectric, NAND/OR/XNOR/IMP/RIMP operations are performed within a single FeTFET, enabling logic-in-memory (LiM) with high area efficiency. It is demonstrated that two inputs can be programmed in two steps, and the type of logic operation can be changed by simply altering the read voltage. The proposed FeTFET-based RLGs consume >99% lower operation energy than FeFET-based ones.

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