Impact of Al-doping on Ferroelectricity and Reliability of HfZrO Film Under High Temperature Annealing

초록

This study explores the influences of Al-doping on a ferroelectricity and a reliability of Hf Zr-0.5 (0.5) O-2 (HZO) films with a high temperature annealing. The Al-doped HZO (Al:HZO) films, in which the Al2O3 (AlO) layers are uniformly doped into the HZO films, are fabricated by using the super-cycles of atomic layer deposition (ALD). All the Al:HZO films show the reduced leakage current, increased breakdown field, 10-year lifetime voltage (> 2.32 V), endurance (> 10(10) cycles) without observable fatigue and wake-up effect. Among the Al:HZO films, the 72:1 cycle ratio (CR) exhibits the highest remanent polarization ( P-r) of similar to 22.7 mu C/cm(2), while the 36:1 CR offered an optimal trade-off between reliability and P-r ( similar to 19.1 mu C/cm(2)) . These results suggest that the Al:HZO films are promising candidates for the next-generation 3D ferroelectric memory applications requiring high thermal budget compatibility and robust reliability.

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