Improvements of short-channel effects using selectively recess-etched FET (SRFET) with two gate regions

초록

A MODFET structure with two gate regions is suggested to improve short channel effect. This type of FETs can be produced using selective gate recess-etches (SRFET). A PISCES simulation on two gate region MODFETs showed substantial decrease in output conductance to 13.6 mS/mm from 20.8 mS/mm of FETs with conventional single gate structure. The improvement, attributed to gradual electric field distribution from the gate structure of SRFETs, should help to improve FET performances. The transconductance, I-V characteristics, and frequency response do not show much difference between conventional single gate-region FETs and the suggested two gate-region SRFETs.