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A Single Amplifier-Based 12-bit 100 MS/s 1 V 19 mW 0.13 μm CMOS ADC with Various Power and Area Minimized Circuit Techniques
- Koo, Byeong-Woo;
- Park, Seung-Jae;
- Ahn, Gil-Cho;
- Lee, Seung-Hoon
WEB OF SCIENCE
3SCOPUS
3초록
This work describes a 12-bit 100 MS/s 0.13 mu m CMOS three-stage pipeline ADC with various circuit design techniques to reduce power and die area. Digitally controlled timing delay and gate-bootstrapping circuits improve the linearity and sampling time mismatch of the SHA-free input network composed of an MDAC and a FLASH ADC. A single two-stage switched op-amp is shared between adjacent MDACs without MOS series switches and memory effects by employing two separate NMOS input pairs based on slightly overlapped switching clocks. The interpolation, open-loop offset sampling, and two-step reference selection schemes for a back-end 6-bit flash ADC reduce both power consumption and chip area drastically compared to the conventional 6-bit flash ADCs. The prototype ADC in a 0.13 mu m CMOS process demonstrates measured differential and integral non-linearities within 0.44LSB and 1.54LSB, respectively. The ADC shows a maximum SNDR and SFDR of 60.5 dB and 71.2 dB at 100 MS/s, respectively. The ADC with an active die area of 0.92 mm(2) consumes 19 mW at 100 MS/s from a 1.0 V supply. The measured FOM is 0.22 pJ/conversion-step.
키워드
- 제목
- A Single Amplifier-Based 12-bit 100 MS/s 1 V 19 mW 0.13 μm CMOS ADC with Various Power and Area Minimized Circuit Techniques
- 저자
- Koo, Byeong-Woo; Park, Seung-Jae; Ahn, Gil-Cho; Lee, Seung-Hoon
- 발행일
- 2011-08
- 유형
- Article
- 권
- E94C
- 호
- 8
- 페이지
- 1282 ~ 1288