Post-annealing effect on the interface morphology and current efficiency of organic light-emitting diodes

  • Yoon, Youngwoon
  • Lee, Hanju
  • Kim, Taedong
  • Kim, Kyoungchul
  • Choi, Sula
  • 외 3명
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초록

We studied the post annealing effect on the interface morphology and performance of organic light-emitting diodes (OLEDs) at 80 degrees C substrate temperature. We observed the crystallinity and roughness changes of each layer in an OLED with ITO/CuPc/NPB/Alq(3)/Al structure at various heat-treatment steps by X-ray diffraction (XRD) and atomic force microscopy (AFM). The roughness changes of each layer affected the current-voltage-luminance (IVL) characteristics of the OLEDs. The best annealing step with the best current efficiency was the sample with annealing at 80 degrees C for 2 h after the deposition of all organic layers. (C) 2012 Elsevier Ltd. All rights reserved.

키워드

OLEDOrganicMorphologyAnnealingTHIN-FILMSTHERMAL-TREATMENTDEVICESLAYERPERFORMANCETEMPERATUREGROWTH
제목
Post-annealing effect on the interface morphology and current efficiency of organic light-emitting diodes
저자
Yoon, YoungwoonLee, HanjuKim, TaedongKim, KyoungchulChoi, SulaYoo, Hyung KeunFriedman, BarryLee, Kiejin
DOI
10.1016/j.sse.2012.07.016
발행일
2013-01
유형
Article
저널명
Solid-State Electronics
79
페이지
45 ~ 49