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초록
We studied the post annealing effect on the interface morphology and performance of organic light-emitting diodes (OLEDs) at 80 degrees C substrate temperature. We observed the crystallinity and roughness changes of each layer in an OLED with ITO/CuPc/NPB/Alq(3)/Al structure at various heat-treatment steps by X-ray diffraction (XRD) and atomic force microscopy (AFM). The roughness changes of each layer affected the current-voltage-luminance (IVL) characteristics of the OLEDs. The best annealing step with the best current efficiency was the sample with annealing at 80 degrees C for 2 h after the deposition of all organic layers. (C) 2012 Elsevier Ltd. All rights reserved.
키워드
OLED; Organic; Morphology; Annealing; THIN-FILMS; THERMAL-TREATMENT; DEVICES; LAYER; PERFORMANCE; TEMPERATURE; GROWTH
- 제목
- Post-annealing effect on the interface morphology and current efficiency of organic light-emitting diodes
- 저자
- Yoon, Youngwoon; Lee, Hanju; Kim, Taedong; Kim, Kyoungchul; Choi, Sula; Yoo, Hyung Keun; Friedman, Barry; Lee, Kiejin
- 발행일
- 2013-01
- 유형
- Article
- 권
- 79
- 페이지
- 45 ~ 49