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초록
In order to investigate the electrical properties of submicron-size Bi2Sr2CaCu2Ox (BSCCO) structures grown on patterned substrates, submicron-size bridge structures of BSCCO have been studied. BSCCO bridge structures 0.7-3.0 mum in width and 1.0 mum in length were grown on patterned SrTiO3 (STO) substrates by a molecular beam epitaxy technique. Patterned STO substrates were fabricated by a focused ion beam (FIB) technique. The BSCCO bridge structure has well-defined facets of {100} and {110} planes. In the current (I) voltage (V) characteristics of these bridges. a large critical current density (J(c)) of the order of 10(6) A/cm(2) was obtained. (C) 2002 Published by Elsevier Science B.V.
키워드
Bi2Sr2CaCu2Ox; submicron size structure; molecular beam epitaxy; critical current density; FILMS
- 제목
- Electrical properties of Bi2Sr2CaCu2Ox submicron structures grown on patterned substrates
- 저자
- Yonemitsu, K; Inagaki, K; Ishibashi, T; Kim, S; Lee, K; Sato, K
- 발행일
- 2002-02-15
- 유형
- Article; Proceedings Paper
- 권
- 367
- 호
- 1-4
- 페이지
- 414 ~ 418