W-band resistive mixer integrated circuit with broadband performance in 0.15μm gaas phemt technologies

초록

In this paper, W-band (75-110 GHz) resistive mixer is designed using 0.15 μm GaAs pseudo-morphic high electron mobility transistor (pHEMT) process. In order to achieve wideband performance, the transistor size and bias conditions are carefully determined so that the transistor presents around 50Ω at IF. In addition, coupled-line RF filter with a ring-resonator is utilized to provide broadband RF matching and IF open circuit which also improves the bandwidth performance. The designed resistive mixer was fabricated and measured at W-band, which shows a good agreement with the simulations. © 2018 Pushpa Publishing House, Allahabad, India.

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