A Compact 150 GHz Three-Stage CMOS Amplifier Using Gmax-core Gain Enhancement Technique

초록

This paper presents of a high-gain amplifier operating at 150 GHz using 28-nm RF CMOS process technology. To mitigate gain degradation at such high frequencies, a dual-gate transistor layout structure was introduced, effectively reducing the gate resistance (Rg) by approximately 50%. The Gmax -core design was applied to achieve the theorical maximum power gain of the transistor, resulting in a 3.6 dB improvement in maximum available gain (MAG) compared to the inherent device. The designed amplifier exhibits a maximum gain of 21.8 dB at 150 GHz and a 3-dB bandwidth ranging from 146 to 154 GHz. © 2026 IEEE.

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