Interface morphologies and interlayer diffusions in organic light emitting device by x-ray scattering

Citations

WEB OF SCIENCE

15
Citations

SCOPUS

15

초록

Surface and interface morphologies with thermal expansions and interlayer diffusions in organic light emitting device [LiF/tris-(8-hydroxyquinoline) aluminum (Alq(3))/N,N-'-bis(naphthalen-1-yl)-N,N-'-bis(phenyl)benzidine (NPB)/copper phthalocyanine (CuPc)/indium tin oxide/SiO2/glass] were studied by synchrotron x-ray scattering. Interface sharpness and roughness correlation are held under annealing at 100 degrees C up to 1 h and at 120 degrees C up to 0.25 h in spite of thermal expansions and interlayer diffusions of NPB and Alq(3) layers. The roughness correlation at the interfaces was recovered partially when the interlayer diffusions reach quasisaturation. Crystallization of NPB is hindered due to the interlayer diffusions and appears at much higher temperature than its glass transition.

키워드

annealingcrystallisationglass transitionindium compoundsinterface roughnesslight emitting devicesorganic semiconductorssilicon compoundssurface morphologysurface roughnessthermal expansionX-ray scatteringDEGRADATIONSTABILITYSURFACE
제목
Interface morphologies and interlayer diffusions in organic light emitting device by x-ray scattering
저자
Lee, Young JooPark, Seong-SikKim, JinwooKim, Hyunjung
DOI
10.1063/1.3148648
발행일
2009-06-01
유형
Article
저널명
Applied Physics Letters
94
22