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Effects of solution-shearing process parameters on charge carrier mobility in green solvent-processed organic field-effect transistors
- Yun, Seungjae;
- Marrocchi, Assunta;
- Vaccaro, Luigi;
- Kim, Choongik
WEB OF SCIENCE
3SCOPUS
3초록
In this work, we explored the effect of solution-shearing processing parameters, coating speed and substrate temperature, on the electrical properties of solution-processed organic field-effect transistors (OFETs) based on 2-decyl-7-phenyl[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-C10) when green solvents are used. Organic semiconductor thin films were solution-sheared with various coating speeds and substrate temperatures and film morphologies/microstructures were investigated by atomic force microscopy (AFM) and X-ray diffraction (XRD) analysis. Our data demonstrate that crystal growth of Ph-BTBT-C10 molecule is highly affected by the two so-lution shearing processing parameters and, especially, the OFET devices fabricated with cyclohexanone as green solvent exhibited the charge carrier mobility as high as 5.1 cm2/Vs with optimized processing condition. This work could further provide a guideline for process optimization for fabricating high-performance green solvent -processed OFETs.
키워드
- 제목
- Effects of solution-shearing process parameters on charge carrier mobility in green solvent-processed organic field-effect transistors
- 저자
- Yun, Seungjae; Marrocchi, Assunta; Vaccaro, Luigi; Kim, Choongik
- 발행일
- 2022-12
- 유형
- Article
- 저널명
- Synthetic Metals
- 권
- 291