Effects of solution-shearing process parameters on charge carrier mobility in green solvent-processed organic field-effect transistors

  • Yun, Seungjae
  • Marrocchi, Assunta
  • Vaccaro, Luigi
  • Kim, Choongik
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초록

In this work, we explored the effect of solution-shearing processing parameters, coating speed and substrate temperature, on the electrical properties of solution-processed organic field-effect transistors (OFETs) based on 2-decyl-7-phenyl[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-C10) when green solvents are used. Organic semiconductor thin films were solution-sheared with various coating speeds and substrate temperatures and film morphologies/microstructures were investigated by atomic force microscopy (AFM) and X-ray diffraction (XRD) analysis. Our data demonstrate that crystal growth of Ph-BTBT-C10 molecule is highly affected by the two so-lution shearing processing parameters and, especially, the OFET devices fabricated with cyclohexanone as green solvent exhibited the charge carrier mobility as high as 5.1 cm2/Vs with optimized processing condition. This work could further provide a guideline for process optimization for fabricating high-performance green solvent -processed OFETs.

키워드

Organic field-effect transistorsSolution shearingGreen solventCharge carrier mobilityTHIN-FILM TRANSISTORSPERFORMANCEPOLYMERSEMICONDUCTORSDEPOSITIONMORPHOLOGYTRANSPORT
제목
Effects of solution-shearing process parameters on charge carrier mobility in green solvent-processed organic field-effect transistors
저자
Yun, SeungjaeMarrocchi, AssuntaVaccaro, LuigiKim, Choongik
DOI
10.1016/j.synthmet.2022.117209
발행일
2022-12
유형
Article
저널명
Synthetic Metals
291