Characteristics and Durability of Vertical-Type Organic Light-Emitting Transistors Using Poly(2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene) and Indenofluorenedione Derivatives

초록

In this study, we have fabricated vertical organic light emitting transistors using indenofluorenedione derivatives (IF-dione-F) as an n-type organic semiconductor. IF-dione-F shows high performance n-type semiconductors owing to the fluorine group in the IF-dione-F backbone. The fluorine group has an electron-withdrawing property. Thus, IF-dione-F shows high electron affinity and good durability. The configuration of the vertical organic light emitting transistors was ITO (drain)/PEDOT:PSS/MEH-PPV/IF-dione-F/AI (gate)/IF-dione-F/A1 (source). The characteristics of the vertical organic light emitting transistors were investigated from the measurements of radiance voltage characteristics and external quantum efficiency. Furthermore, air stability was studied from the measurements of characteristics, impedance spectroscopy and contact angle.

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