Influence of sulfate residue on Cu2ZnSnS4 thin films prepared by direct solution method

  • Viet Tuyen Nguyen; 
  • Nam, Dahyun; 
  • Gansukh, Mungunshagai; 
  • Park, Si-Nae; 
  • Sung, Shi-Joon; 
  • ... Cheong, Hyeonsik; 
  • 외 4명
Citations

WEB OF SCIENCE

17
Citations

SCOPUS

18

초록

Raman scattering and atomic force microscopy measurements on Cu5ZnSnS4 thin films prepared by a direct solution method revealed that metal sulfates of various morphologies (dense clusters or separated particles) were partially embedded on the surface of the Cu2ZnSnS4 layer. This residue was removed during the subsequent chemical bath deposition of the CdS buffer layer. However, the removal of the residue led to poor crystallinity and reduced photocurrent near the location of the residue, which suggests that controlling the formation of the sulfates during the fabrication of the absorber layer would be critical for obtaining high efficiency solar cells by the solution method. (C) 2015 Elsevier B.V. All rights reserved.

키워드

Copper-zinc-tin sulfide; Thin films; Raman spectroscopy; Laser beam induced current; Residue; Sulfurization; VIBRATIONAL PROPERTIES; THERMAL-DECOMPOSITION; KESTERITE; THIOUREA
제목
Influence of sulfate residue on Cu2ZnSnS4 thin films prepared by direct solution method
저자
Viet Tuyen Nguyen; Nam, Dahyun; Gansukh, Mungunshagai; Park, Si-Nae; Sung, Shi-Joon; Kim, Dae-Hwan; Kang, Jin-Kyu; Cong Doanh Sai; Thi Ha Tran; Cheong, Hyeonsik
DOI
10.1016/j.solmat.2015.01.003
발행일
2015-05
유형
Article
저널명
Solar Energy Materials and Solar Cells
권
136
페이지
113 ~ 119