Design of an H-band Frequency Tripler and Buffer Amplifier IC in 250-nm InP HBT Process

  • 김형은
  • 장영민
  • 전영채
  • 정진호

초록

In this paper, we propose the design of an H-band(220-330 GHz) frequency tripler, buffer amplifier IC(Integrated Circuit) using 250-nm InP HBT technologies. H-band frequency tripler is designed by using triple-push technique and is composed of 3-way 120° power divider and coupled line. Simulated result of H-band tripler shows -3 dBm output power while measured result shows between -9 and -6 dBm output power. Spectrum result of H-band tripler is down-converted by H-band harmonic mixer but it shows H-band tripler operates well at H-band. To decrease buffer amplifier chip area, we use cascode method in buffer amplifier design. IC with H-band tripler and buffer shows 5.6 dBm output power and -3.6 dB conversion gain. Finally, to decrease performance degradation due to off-chip transition, we will design on-chip transition connecting waveguide and microstrip.

키워드

Buffer amplifierH-bandMillimeter waveTripler
제목
Design of an H-band Frequency Tripler and Buffer Amplifier IC in 250-nm InP HBT Process
저자
김형은장영민전영채정진호
DOI
10.23075/jicas.2022.8.4.008
발행일
2022-10
저널명
IDEC Journal of Integrated Circuits and Systems
8
4
페이지
45 ~ 48