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Design of an H-band Frequency Tripler and Buffer Amplifier IC in 250-nm InP HBT Process
- 김형은;
- 장영민;
- 전영채;
- 정진호
초록
In this paper, we propose the design of an H-band(220-330 GHz) frequency tripler, buffer amplifier IC(Integrated Circuit) using 250-nm InP HBT technologies. H-band frequency tripler is designed by using triple-push technique and is composed of 3-way 120° power divider and coupled line. Simulated result of H-band tripler shows -3 dBm output power while measured result shows between -9 and -6 dBm output power. Spectrum result of H-band tripler is down-converted by H-band harmonic mixer but it shows H-band tripler operates well at H-band. To decrease buffer amplifier chip area, we use cascode method in buffer amplifier design. IC with H-band tripler and buffer shows 5.6 dBm output power and -3.6 dB conversion gain. Finally, to decrease performance degradation due to off-chip transition, we will design on-chip transition connecting waveguide and microstrip.
키워드
- 제목
- Design of an H-band Frequency Tripler and Buffer Amplifier IC in 250-nm InP HBT Process
- 저자
- 김형은; 장영민; 전영채; 정진호
- 발행일
- 2022-10
- 저널명
- IDEC Journal of Integrated Circuits and Systems
- 권
- 8
- 호
- 4
- 페이지
- 45 ~ 48