H-Band Power Amplifier Waveguide Module Using Two-Way On-Chip Power-Combining Transition

Jang, Yeongmin; Baek, Jeongho; Lee, Jongmin; Woo, Hongje; Jeong, Jinho

doi:10.1109/LMWT.2025.3589230

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H-Band Power Amplifier Waveguide Module Using Two-Way On-Chip Power-Combining Transition

Jang, Yeongmin;
Baek, Jeongho;
Lee, Jongmin;
Woo, Hongje;
Jeong, Jinho

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초록

This article presents an H-band power amplifier (PA) module utilizing power-combining transitions, implemented in a 250-nm indium phosphide (InP) heterojunction bipolar transistor (HBT) technology. The PA module integrates two compact cascode unit PAs and two-way waveguide-to-microstrip transitions within a single integrated circuit (IC). To address in-band resonances caused by substrate modes in the InP substrate, a recessed pedestal is introduced, significantly improving the bandwidth performance. The fabricated two-way PA module achieves a peak gain of 16.4 dB at 237 GHz and a peak output power (P-out) of 11 dBm at 240 GHz with P-out > 8.0 dBm across 220-280 GHz. These results are among the best reported in terms of Pout and bandwidth for H-band PA modules.

키워드

Substrates; System-on-chip; Indium phosphide; III-V semiconductor materials; Waveguide transitions; Power amplifiers; Terahertz communications; Gain; Wireless communication; Silicon; Dipole; power amplifier (PA); resonance; transition; waveguide

제목: H-Band Power Amplifier Waveguide Module Using Two-Way On-Chip Power-Combining Transition

저자: Jang, Yeongmin; Baek, Jeongho; Lee, Jongmin; Woo, Hongje; Jeong, Jinho

DOI: 10.1109/LMWT.2025.3589230

발행일: 2025-10

유형: Article

저널명: Ieee Microwave and Wireless Technology Letters

권: 35

호: 10

페이지: 1558 ~ 1561