Nitrogen-induced levels in GaAs1-xNx studied with resonant Raman scattering

초록

Resonant Raman scattering is used to study the nature of the recently discovered nitrogen-induced level E+ located in the conduction band of GaAs1-xNx (0.001 less than or equal to x less than or equal to 0.022). Our data demonstrate that the E+ state is derived from the nitrogen-induced T-L mixing of the bulk GaAs states;and that it is no an isolated nitrogen impurity level. A broadening of the GaAs-like longitudinal-optical phonon-line and an enhancement of the transverse-optical phonon line is observed near resonance, which is interpreted as being due to resonance with strongly localized states.

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