Efficient Charge Separation and Synaptic Plasticity in Dual Heterojunction Photo-Synaptic Transistors for Neuromorphic Systems

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초록

A dual heterojunction photo-synaptic transistor was developed using perovskite and pentacene materials, with Poly(methyl methacrylate) acting as both a tunneling layer and a passivation layer. The device exhibits efficient separation of photo-generated electron-hole pairs, enabling sustained current flow while minimizing recombination. Key synaptic behaviors, including excitatory post-synaptic current (EPSC), short-term plasticity (STP), and long-term potentiation (LTP), were effectively modulated by adjusting light intensity and pulse frequency. The dual heterojunction design ensures stable operation without threshold voltage shifts. These findings highlight the potential of dual heterojunction photo-synaptic transistors as promising candidates for high-efficiency neuromorphic systems.

키워드

Photo-synaptic transistorNeuromorphic deviceDual heterojunction structureFIELD-EFFECT TRANSISTORN-TYPEPERFORMANCEINTERFACEDEVICE
제목
Efficient Charge Separation and Synaptic Plasticity in Dual Heterojunction Photo-Synaptic Transistors for Neuromorphic Systems
저자
Meang, KyuminYun, Kwang-Seok
DOI
10.1007/s42835-025-02359-3
발행일
2025-07-16
유형
Article
저널명
Journal of Electrical Engineering & Technology
20
6
페이지
4329 ~ 4341