High-detectivity perovskite-based photodetector using a Zr-doped TiOx cathode interlayer

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초록

We investigated the incorporation of Zr into TiOx cathode interlayers used as hole-blocking layers in an organometallic halide perovskite- based photodetector. The device configuration is ITO/PEDOT:PSS/CH3NH3 PbIxCl3-x/PC60BM/Zr-TiOx/Al. The use of Zr-TiOx in the perovskite photodetector reduces the leakage current and improves carrier extraction. The performance of the perovskite photodetector was confirmed by analyzing the current-voltage characteristics, impedance behaviors, and dynamic characteristics. The device with a Zr-TiOx layer has a high specific detectivity of 1.37 x 10(13) Jones and a bandwidth of 2.1 MHz at a relatively low reverse bias and light intensity. Therefore, it can be effectively applied to devices such as image and optical sensors.

키워드

SOLAR-CELLSHALIDE PEROVSKITELOW-NOISEPHOTOVOLTAICSPHOTODIODESWAVELENGTHEFFICIENCYDETECTORSSTABILITYSILICON
제목
High-detectivity perovskite-based photodetector using a Zr-doped TiOx cathode interlayer
저자
Ji, C. H.Kim, K. T.Oh, S. Y.
DOI
10.1039/c8ra00730f
발행일
2018
유형
Article
저널명
RSC Advances
8
15
페이지
8302 ~ 8309