상세 보기
CMOS-compatible ferroelectric tunnel junctions integrate stochastic sampling and deterministic computing for image generation
- Koo, Ryun-Han;
- Ko, Jonghyun;
- Shin, Wonjun;
- Ryu, Sangwoo;
- Im, Jiseong;
- ... Kim, Jangsaeng;
- 외 7명
WEB OF SCIENCE
0SCOPUS
0초록
Recent progress in generative modeling has intensified the need for compact, energy-efficient hardware platforms. Yet, implementing image generation directly in hardware remains challenging due to the conflicting requirements of stochastic latent space sampling and deterministic decoding. Here, we show a unified hardware framework based on hafnium-oxide ferroelectric tunnel junctions (FTJs) that intrinsically support both functionalities within a single device array. Leveraging the CMOS- and VLSI-compatible fabrication of hafnia ferroelectrics, we realize dual-mode operation: random telegraph noise generation for controllable stochastic sampling, and high-fidelity vector-matrix multiplication enabled by non-volatile multi-level conductance states. Voltage and sampling-time tuning provide fine control over randomness and reliability, enabling high-quality image generation for tasks such as handwritten digit synthesis (MNIST) and high-resolution facial image generation (CelebA). Circuit-level demonstrations confirm stable performance over 105 cycles, surpassing prior hardware-based approaches and illustrating a viable route toward scalable, on-chip generative AI accelerators.
키워드
- 제목
- CMOS-compatible ferroelectric tunnel junctions integrate stochastic sampling and deterministic computing for image generation
- 저자
- Koo, Ryun-Han; Ko, Jonghyun; Shin, Wonjun; Ryu, Sangwoo; Im, Jiseong; Park, Sung-Ho; Hwang, Joon; Song, Minsuk; Cho, Youngchan; Kim, Jangsaeng; Jung, Gyuweon; Kwon, Daewoong; Lee, Jong-Ho
- 발행일
- 2026-05
- 유형
- Article
- 권
- 17
- 호
- 1