CMOS-compatible ferroelectric tunnel junctions integrate stochastic sampling and deterministic computing for image generation

  • Koo, Ryun-Han
  • Ko, Jonghyun
  • Shin, Wonjun
  • Ryu, Sangwoo
  • Im, Jiseong
  • ... Kim, Jangsaeng
  • 외 7명
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초록

Recent progress in generative modeling has intensified the need for compact, energy-efficient hardware platforms. Yet, implementing image generation directly in hardware remains challenging due to the conflicting requirements of stochastic latent space sampling and deterministic decoding. Here, we show a unified hardware framework based on hafnium-oxide ferroelectric tunnel junctions (FTJs) that intrinsically support both functionalities within a single device array. Leveraging the CMOS- and VLSI-compatible fabrication of hafnia ferroelectrics, we realize dual-mode operation: random telegraph noise generation for controllable stochastic sampling, and high-fidelity vector-matrix multiplication enabled by non-volatile multi-level conductance states. Voltage and sampling-time tuning provide fine control over randomness and reliability, enabling high-quality image generation for tasks such as handwritten digit synthesis (MNIST) and high-resolution facial image generation (CelebA). Circuit-level demonstrations confirm stable performance over 105 cycles, surpassing prior hardware-based approaches and illustrating a viable route toward scalable, on-chip generative AI accelerators.

키워드

NOISE
제목
CMOS-compatible ferroelectric tunnel junctions integrate stochastic sampling and deterministic computing for image generation
저자
Koo, Ryun-HanKo, JonghyunShin, WonjunRyu, SangwooIm, JiseongPark, Sung-HoHwang, JoonSong, MinsukCho, YoungchanKim, JangsaengJung, GyuweonKwon, DaewoongLee, Jong-Ho
DOI
10.1038/s41467-026-72969-6
발행일
2026-05
유형
Article
저널명
Nature Communications
17
1