Improving the Performance of Organic Photodetector Using Hf-SnO2 as an Electron Transport Layer

초록

The adequate control of dark current is the key to achieving high detectivity in organic photodetectors (OPDs). In this study, we incorporated hafnium (Hf), a rare earth mineral, into tin oxide (SnO2) to form hafnium doped SnO2 (Hf-SnO2) as an electron transport layer (ETL) in OPDs. It was observed that the performance of OPDs with a Hf-SnO2 electron transport layer in OPDs is superior to that of conventional SnO2 as it significantly reduces the leakage current recording a high specific detectivity of 8.70 x 10(11) Jones and a bandwidth of 229.63 kHz at -1 V and 525 nm. Furthermore, Hf-SnO2 can be processed at a low temperature, thereby broadening the fields of applications such as flexible devices and large area cells.

키워드