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Polyimide/Ta2O5 nanocomposite gate insulators for enhanced organic thin-film transistor performance
- Chen, Liang-Hsiang;
- Lin, Pang;
- Ho, Jia-Chong;
- Lee, Cheng-Chung;
- Kim, Choongik;
- 외 1명
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25초록
This study reports the preparation and characterization of polyimide/Ta2O5 nanocomposite films as insulators for organic thin-film transistors (OTFTs). The degree of imidization, thermal, electrical, and surface properties of the nanocomposite films were characterized as a function of Ta2O5 precursor contents. The nanocomposite films, with controlled/comparable insulator electrical characteristics and surface properties, have been found to enhance dielectric constant compared to pristine polyimide films, which resulted in improved pentacene TFT performance by a factor of 2-3 with carrier mobility values as high as 0.38 cm(2)/Vs. (C) 2011 Elsevier B.V. All rights reserved.
키워드
Organic thin-film transistors (OTFTs); Nanocomposite; Hybrid films; Gate insulator; MOBILITY; MORPHOLOGY; CIRCUITS; VOLTAGE
- 제목
- Polyimide/Ta2O5 nanocomposite gate insulators for enhanced organic thin-film transistor performance
- 저자
- Chen, Liang-Hsiang; Lin, Pang; Ho, Jia-Chong; Lee, Cheng-Chung; Kim, Choongik; Chen, Ming-Chou
- 발행일
- 2011-08
- 유형
- Article
- 저널명
- Synthetic Metals
- 권
- 161
- 호
- 15-16
- 페이지
- 1527 ~ 1531