Polyimide/Ta2O5 nanocomposite gate insulators for enhanced organic thin-film transistor performance

  • Chen, Liang-Hsiang; 
  • Lin, Pang; 
  • Ho, Jia-Chong; 
  • Lee, Cheng-Chung; 
  • Kim, Choongik; 
  • 외 1명
Citations

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25
Citations

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25

초록

This study reports the preparation and characterization of polyimide/Ta2O5 nanocomposite films as insulators for organic thin-film transistors (OTFTs). The degree of imidization, thermal, electrical, and surface properties of the nanocomposite films were characterized as a function of Ta2O5 precursor contents. The nanocomposite films, with controlled/comparable insulator electrical characteristics and surface properties, have been found to enhance dielectric constant compared to pristine polyimide films, which resulted in improved pentacene TFT performance by a factor of 2-3 with carrier mobility values as high as 0.38 cm(2)/Vs. (C) 2011 Elsevier B.V. All rights reserved.

키워드

Organic thin-film transistors (OTFTs); Nanocomposite; Hybrid films; Gate insulator; MOBILITY; MORPHOLOGY; CIRCUITS; VOLTAGE
제목
Polyimide/Ta2O5 nanocomposite gate insulators for enhanced organic thin-film transistor performance
저자
Chen, Liang-Hsiang; Lin, Pang; Ho, Jia-Chong; Lee, Cheng-Chung; Kim, Choongik; Chen, Ming-Chou
DOI
10.1016/j.synthmet.2011.05.002
발행일
2011-08
유형
Article
저널명
Synthetic Metals
권
161
호
15-16
페이지
1527 ~ 1531