A Low-Power Bandgap Reference with Curvature Correction Scheme from -50°C to 140°C

초록

This paper presents low-power curvature compensation techniques for bandgap references operating in the subthreshold region. A parasitic pnp device with a replica branch is proposed to mitigate the curvature in complementary-to-absolute-temperature voltage. The dynamic element matching technique is also employed to reduce the device mismatches. The proposed BGR circuit is designed in a 90-nm CMOS process and simulated, achieving a reference voltage of 1.2 V with a σ/μ ratio of 0.17% and a temperature coefficient of 8.77 ppm/°C over the -50°C to 140°C temperature range. © 2025 IEEE.

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