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Strong Polarization Dependence of Double-Resonant Raman Intensities in Graphene
- Yoon, Duhee;
- Moon, Hyerim;
- Son, Young-Woo;
- Samsonidze, G.;
- Park, Bae Ho;
- ... Cheong, Hyeonsik;
- 외 2명
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Spatially resolved and polarized micro-Raman spectroscopy on microcrystalline graphene shows strong polarization dependences of double-resonance Raman intensities. The Raman intensity of the double-resonant 2D band is maximum when the excitation and detection polarizations are parallel and minimum when they are orthogonal, whereas that of the G band is isotropic. A calculation shows that this strong polarization dependence is a direct consequence of inhomogeneous optical absorption and emission mediated by electron-phonon interactions involved in the second-order Stokes-Stokes Raman scattering process.
키워드
WALL CARBON NANOTUBES; EPITAXIAL GRAPHENE; DIRAC FERMIONS; SINGLE-WALL; SPECTROSCOPY; SCATTERING; GRAPHITE; LAYER
- 제목
- Strong Polarization Dependence of Double-Resonant Raman Intensities in Graphene
- 저자
- Yoon, Duhee; Moon, Hyerim; Son, Young-Woo; Samsonidze, G.; Park, Bae Ho; Kim, Jin Bae; Lee, YoungPak; Cheong, Hyeonsik
- 발행일
- 2008-12
- 유형
- Article
- 저널명
- Nano Letters
- 권
- 8
- 호
- 12
- 페이지
- 4270 ~ 4274