H-Band InP HBT Frequency Tripler Using the Triple-Push Technique

초록

A broadband H-band (220 GHz-325 GHz) frequency tripler using the triple-push technique is presented in 250-nm InP heterojunction bipolar transistors (HBT) technology. It consisted of three identical unit-cell multipliers, which were individually pumped by the W-band input signals with 120 degrees phase difference. For this purpose, a 120 degrees 3-way power divider was proposed using the 1:2 and 1:1 Lange couplers with 30 degrees phase delay lines. The fundamental and 2nd harmonic signals of each unit-cell multiplier were added out-of-phase at the output, allowing an effective harmonic suppression. On the contrast, the 3rd harmonic components were combined in-phase at the output, so that the entire circuit successfully did the function of the frequency multiplier-by-3. The fabricated frequency tripler exhibited a broadband output power of -7.4 +/- 1.4 dBm from 225 GHz to 330 GHz at an input power of 9.6 +/- 0.8 dBm, with an average conversion gain of -16.8 dB.

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