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Multi-layered nanocomposite dielectrics for high density organic memory devices
- Kang, Moonyeong;
- Chung, Kyungwha;
- Baeg, Kang-Jun;
- Kim, Dong Ha;
- Kim, Choongik
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14초록
We fabricated organic memory devices with metal-pentacene-insulator-silicon structure which contain double dielectric layers comprising 3D pattern of Au nanoparticles (Au NPs) and block copolymer (PS-b-P2VP). The role of Au NPs is to charge/discharge carriers upon applied voltage, while block copolymer helps to form highly ordered Au NP patterns in the dielectric layer. Double-layered nanocomposite dielectrics enhanced the charge trap density (i.e., trapped charge per unit area) by Au NPs, resulting in increase of the memory window (Delta V-th). (C) 2015 AIP Publishing LLC.
키워드
ASSEMBLED GOLD NANOPARTICLES; POLYMERIC GATE ELECTRET; FIELD-EFFECT TRANSISTOR; BLOCK-COPOLYMER; THIN-FILM; PERFORMANCE; ELEMENT
- 제목
- Multi-layered nanocomposite dielectrics for high density organic memory devices
- 저자
- Kang, Moonyeong; Chung, Kyungwha; Baeg, Kang-Jun; Kim, Dong Ha; Kim, Choongik
- 발행일
- 2015-01-26
- 유형
- Article
- 권
- 106
- 호
- 4