Multi-layered nanocomposite dielectrics for high density organic memory devices

  • Kang, Moonyeong; 
  • Chung, Kyungwha; 
  • Baeg, Kang-Jun; 
  • Kim, Dong Ha; 
  • Kim, Choongik
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14

초록

We fabricated organic memory devices with metal-pentacene-insulator-silicon structure which contain double dielectric layers comprising 3D pattern of Au nanoparticles (Au NPs) and block copolymer (PS-b-P2VP). The role of Au NPs is to charge/discharge carriers upon applied voltage, while block copolymer helps to form highly ordered Au NP patterns in the dielectric layer. Double-layered nanocomposite dielectrics enhanced the charge trap density (i.e., trapped charge per unit area) by Au NPs, resulting in increase of the memory window (Delta V-th). (C) 2015 AIP Publishing LLC.

키워드

ASSEMBLED GOLD NANOPARTICLES; POLYMERIC GATE ELECTRET; FIELD-EFFECT TRANSISTOR; BLOCK-COPOLYMER; THIN-FILM; PERFORMANCE; ELEMENT
제목
Multi-layered nanocomposite dielectrics for high density organic memory devices
저자
Kang, Moonyeong; Chung, Kyungwha; Baeg, Kang-Jun; Kim, Dong Ha; Kim, Choongik
DOI
10.1063/1.4907320
발행일
2015-01-26
유형
Article
저널명
Applied Physics Letters
권
106
호
4