Multi-layered nanocomposite dielectrics for high density organic memory devices

  • Kang, Moonyeong
  • Chung, Kyungwha
  • Baeg, Kang-Jun
  • Kim, Dong Ha
  • Kim, Choongik
Citations

WEB OF SCIENCE

20
Citations

SCOPUS

14

초록

We fabricated organic memory devices with metal-pentacene-insulator-silicon structure which contain double dielectric layers comprising 3D pattern of Au nanoparticles (Au NPs) and block copolymer (PS-b-P2VP). The role of Au NPs is to charge/discharge carriers upon applied voltage, while block copolymer helps to form highly ordered Au NP patterns in the dielectric layer. Double-layered nanocomposite dielectrics enhanced the charge trap density (i.e., trapped charge per unit area) by Au NPs, resulting in increase of the memory window (Delta V-th). (C) 2015 AIP Publishing LLC.

키워드

ASSEMBLED GOLD NANOPARTICLESPOLYMERIC GATE ELECTRETFIELD-EFFECT TRANSISTORBLOCK-COPOLYMERTHIN-FILMPERFORMANCEELEMENT
제목
Multi-layered nanocomposite dielectrics for high density organic memory devices
저자
Kang, MoonyeongChung, KyungwhaBaeg, Kang-JunKim, Dong HaKim, Choongik
DOI
10.1063/1.4907320
발행일
2015-01-26
유형
Article
저널명
Applied Physics Letters
106
4