Skyrmion Phase in MnSi Thin Films Grown on Sapphire by a Conventional Sputtering

  • Choi, Won-Young; 
  • Bang, Hyun-Woo; 
  • Chun, Seung-Hyun; 
  • Lee, Sunghun; 
  • Jung, Myung-Hwa
Citations

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초록

Topologically protected chiral skyrmions are an intriguing spin texture that has attracted much attention because of fundamental research and future spintronic applications. MnSi with a non-centrosymmetric structure is a well-known material hosting a skyrmion phase. To date, the preparation of MnSi crystals has been investigated by using special instruments with an ultrahigh vacuum chamber. Here, we introduce a facile way to grow MnSi films on a sapphire substrate using a relatively low vacuum environment of conventional magnetron sputtering. Although the as-grown MnSi films have a polycrystalline nature, a stable skyrmion phase in a broad range of temperatures and magnetic fields is observed via magnetotransport properties including phenomenological scaling analysis of the Hall resistivity contribution. Our findings provide not only a general way to prepare the materials possessing skyrmion phases but also insight into further research to stimulate more degrees of freedom in our inquisitiveness.

키워드

MnSi; Sputtering; Polycrystal; Skyrmion; Topological Hall effect
제목
Skyrmion Phase in MnSi Thin Films Grown on Sapphire by a Conventional Sputtering
저자
Choi, Won-Young; Bang, Hyun-Woo; Chun, Seung-Hyun; Lee, Sunghun; Jung, Myung-Hwa
DOI
10.1186/s11671-020-03462-2
발행일
2021-01-06
유형
Article
저널명
Nanoscale Research Letters
권
16
호
1