Polyurethane triblock copolymer gate dielectrics for low-voltage organic thin-film transistors

초록

Novel polyurethane triblock copolymers comprising polycaprolactone diol (PCL), 1,6-hexamethylene diisocyanate (HMDI), and polyethylene glycol (PEG) were synthesized for use as gate dielectric for organic thin-film transistors (OTFTs). Thin films of polyurethane gate dielectrics processed from solution exhibit excellent insulating properties (similar to 7 x 10(-7) A/cm(2) at 1 V) as well as large areal capacitance (170 nF/cm(2)) with film thickness of similar to 50 nm. OTFTs are fabricated with representative n-channel organic semiconductor (N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide; PTCDI-C13) using the developed gate dielectrics, and the resulting devices show decent electrical performance with negligible hysteresis at low operating voltage of 1 V. (C) 2018 The Korean Society of Industrial and Engineering Chemistry. Published by Elsevier B.V. All rights reserved.

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