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10b 150MS/s 0.4mm<SUP>2</SUP> 45nm CMOS ADC Based on Process-Insensitive Amplifiers
- An, Tai-Ji;
- Park, Jun-Sang;
- Kim, Yong-Min;
- Cho, Suk-Hee;
- Ahn, Gil-Cho;
- 외 1명
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2초록
A 10b 150MS/ s 0.4mm(2) pipeline ADC is implemented in a 45nm CMOS process. The input SHA, employing four charge-redistributed capacitors, converts single-ended or differential input signals of 1.2Vpp to differential outputs of 0.8Vpp for a low supply voltage of 1.1V. The process-insensitive high-gain amplifiers in the SHA and MDACs are based on gain-boosting, pseudo-differential output pair, and continuous-time common-mode feedback circuits to overcome various performance limitations that are observed in deep nanometer CMOS technologies. The MDAC2 and MDAC3 share a single high-gain amplifier to reduce the input memory effect, chip area, and power dissipation. The measured DNL and INL are within 1.06 and 1.29LSB, respectively. At 150MS/s, the prototype ADC shows a maximum SNDR of 51.8dB and a maximum SFDR of 63.7dB with a 1.2Vpp sinusoidal input and consumes 47.3mW.
- 제목
- 10b 150MS/s 0.4mm<SUP>2</SUP> 45nm CMOS ADC Based on Process-Insensitive Amplifiers
- 저자
- An, Tai-Ji; Park, Jun-Sang; Kim, Yong-Min; Cho, Suk-Hee; Ahn, Gil-Cho; Lee, Seung-Hoon
- 발행일
- 2013
- 유형
- Proceedings Paper
- 저널명
- IEEE International Symposium on Circuits and Systems proceedings
- 페이지
- 361 ~ 364