A Ladder-Type Organosilicate Copolymer Gate Dielectric Materials for Organic Thin-Film Transistors

초록

A ladder-type organosilicate copolymer based on trimethoxymethylsilane (MTMS) and 1,2-bis(triethoxysilyl)alkane (BTESn: n = 2-4) were synthesized for use as gate dielectrics in organic thin-film transistors (OTFTs). For the BTESn, the number of carbon chains (2-4) was varied to elucidate the relationship between the chemical structure of the monomer and the resulting dielectric properties. The developed copolymer films require a low curing temperature (approximate to 150 degrees C) and exhibit good insulating properties (leakage current density of approximate to 10(-8)-10(-7) A center dot cm(-2) at 1 MV center dot cm(-1)). Copolymer films were employed as dielectric materials for use in top-contact/bottom-gate organic thin-film transistors and the resulting devices exhibited decent electrical performance for both p- and n-channel organic semiconductors with mobility as high as 0.15 cm(2)center dot V-1 center dot s(-1) and an I-on/I-off of >10(5). Furthermore, dielectric films were used for the fabrication of TFTs on flexible substrates.

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