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Fabrication of SiC MESFET's for microwave applications
- Jung, JH;
- Park, H;
- Park, JK;
- Park, HC;
- Bae, KH;
- ... Burm, JW;
- 외 2명
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9초록
4H-SiC MESFET's on conducting substrates were designed, fabricated, and DC characterized. An inductively coupled plasma etcher was developed and used for the channel recess etching of the MESFET. Fabricated MESFET's with 1-mum gate lengths and 100-mum gate widths showed a very high drain current density of 980 mA/mm and a maximum transconductance of 35 mS/mm, indicating a high potential for microwave power applications.
키워드
SiC; MESFET; microwave
- 제목
- Fabrication of SiC MESFET's for microwave applications
- 저자
- Jung, JH; Park, H; Park, JK; Park, HC; Bae, KH; Shin, DH; Song, NJ; Burm, JW
- 발행일
- 2002-04
- 유형
- Article
- 권
- 40
- 호
- 4
- 페이지
- 588 ~ 591