A 13.5-mW 10-Gb/s 4-PAM Serial Link Transmitter in 0.13-μm CMOS Technology

Song, Bongsub; Kim, Kyunghoon; Lee, Junan; Chung, Jinil; Choi, Youngjung; Burm, Jinwook

doi:10.1109/TCSII.2014.2331101

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A 13.5-mW 10-Gb/s 4-PAM Serial Link Transmitter in 0.13-μm CMOS Technology

Song, Bongsub;
Kim, Kyunghoon;
Lee, Junan;
Chung, Jinil;
Choi, Youngjung;
... Burm, Jinwook

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초록

A 13.5-mW 10-Gb/s four-level pulse-amplitude modulation (4-PAM) serial link transmitter is presented. To improve the power efficiency, a voltage-mode 4-PAM driver is proposed. It consists of voltage-scaled pull-up and pull-down networks, instead of conventional current switching networks. Not employing a tail current source, the proposed 4-PAM driver achieves the higher output voltage swing and lower power dissipation than conventional 4-PAM drivers. As a result, the proposed 4-PAM transmitter implemented in a 0.13-mu m CMOS process achieved 10-Gb/s data rate with only 13.5-mW power dissipation.

키워드

CMOS; high-speed integrated circuits; pulse-amplitude modulation (PAM); serial link; transceiver; BACKPLANE TRANSCEIVER; PREEMPHASIS; DRIVER

제목: A 13.5-mW 10-Gb/s 4-PAM Serial Link Transmitter in 0.13-μm CMOS Technology

저자: Song, Bongsub; Kim, Kyunghoon; Lee, Junan; Chung, Jinil; Choi, Youngjung; Burm, Jinwook

DOI: 10.1109/TCSII.2014.2331101

발행일: 2014-09

유형: Article

저널명: IEEE Transactions on Circuits and Systems II: Express Briefs

권: 61

호: 9

페이지: 646 ~ 650

언어: ENG

출판사: Institute of Electrical and Electronics Engineers

발행국가: 미국

분량: 5 페이지

ISSN: E 1558-3791
P 1549-7747