Page overwriting method for performance improvement of NAND flash memories

  • Won, Samkyu
  • Chung, Eui-Young
  • Kim, Duckju
  • Chung, Junseop
  • Han, Bongseok
  • ... Lee, Hyukjun
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초록

This paper presents a novel page overwriting scheme for NAND flash memory. It provides significantly improved in-place page update with minimum hardware overhead. It does not require valid page copy for erase operation in order to modify data in a written page. Experimental results show 3.3 similar to 47.5 times faster page update time with one overwrite allowance and 1.3 similar to 18.7 with four overwrites allowance compared with conventional method.

키워드

NAND flash memorysingle level cellmulti-level celloverwritewrite performance
제목
Page overwriting method for performance improvement of NAND flash memories
저자
Won, SamkyuChung, Eui-YoungKim, DuckjuChung, JunseopHan, BongseokLee, Hyukjun
DOI
10.1587/elex.10.20130039
발행일
2013
유형
Article
저널명
IEICE Electronics Express
10
6