Low-Frequency Raman Spectroscopy of Few-Layer 2H-SnS2

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초록

We investigated interlayer phonon modes of mechanically exfoliated few-layer 2H-SnS2 samples by using room temperature low-frequency micro-Raman spectroscopy. Raman measurements were performed using laser wavelengths of 441.6, 514.4, 532 and 632.8 nm with power below 100 mu W and inside a vacuum chamber to avoid photo-oxidation. The intralayer E-g and A(1g) modes are observed at similar to 206 cm(-1) and 314 cm(-1), respectively, but the E-g mode is much weaker for all excitation energies. The A(1g) mode exhibits strong resonant enhancement for the 532 nm (2.33 eV) laser. In the low-frequency region, interlayer vibrational modes of shear and breathing modes are observed. These modes show characteristic dependence on the number of layers. The strengths of the interlayer interactions are estimated by fitting the interlayer mode frequencies using the linear chain model and are found to be 1.64 x 10(19) N . m(-3) and 5.03 x 10(19) N . m(-3) for the shear and breathing modes, respectively.

키워드

INTERLAYER SHEAR MODESTIN DISULFIDESTRUCTURAL POLYTYPISMSNS2SCATTERINGPRESSUREGROWTHVIBRATIONSCRYSTALSSPECTRA
제목
Low-Frequency Raman Spectroscopy of Few-Layer 2H-SnS2
저자
Sriv, TharithKim, KangwonCheong, Hyeonsik
DOI
10.1038/s41598-018-28569-6
발행일
2018-07-05
유형
Article
저널명
Scientific Reports
8
1