A 232.2nW Segmented Curvature Compensation Sub-BGR with Bandgap Core Reusing

초록

This paper presents a segmented curvature compensation sub-BGR that maintains a low TC with low power consumption over a wide temperature range. In this work, segmented curvature compensation is applied to achieve lower TC by adding correction voltages to uncompensated reference voltage. Furthermore, the bandgap core is reused for the generation of the voltages required for segmented curvature compensation, contributing high power and area efficiency. The proposed sub-BGR is implemented in a 180 nm CMOS process and occupies an active area of 0.21 mm2. Measurement results show a reference voltage of 1.191 V and power consumption of 232.2 nW under 1.8 V supply. It achieves an average TC of 17.69 ppm/degrees C across a temperature range from-40 degrees C to 120 degrees C.

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