Design of wideband CMOS ESD protection circuit using mutually coupled inductor

초록

In this paper, we present a wideband electrostatic discharge (ESD) protection circuit in a 28 nm FDSOI CMOS process. The diodes used in the ESD protection circuit introduce the large parasitic capacitance in the IO pads which seriously limits the IO bandwidth of the high-speed CMOS circuits. In order to compensate for the parasitic capacitance and restore the bandwidth, mutually coupled inductor are proposed using the stacked metal layers in CMOS process. It allows the tighter magnetic coupling and more freedom in the design than the conventional T-coil. Therefore, it can lead to the high ratio of bandwidth extension under a compact chip area. The proposed circuit was fabricated in a 28 nm FDSOI CMOS process. The on-wafer measurement shows wideband performance such as insertion loss less than 3 dB up to 21.5 GHz. The return loss is better than 10 dB up to 14.5 GHz.

키워드