LOW-IF NOISE CHARACTERISTICS OF W-BAND RESISTIVE AND DIODE MIXERS

초록

In this letter, W-band mixers (resistive and diode mixers) are designed using a 0.15 mu m GaAs pseudo-morphic high electron mobility transistor process for frequency-modulated continuous wave radars. The measurement shows that both mixers can achieve a good conversion gain of 29 dB with high linearity performance. In addition, noise figures (NFs) of both mixers are measured especially at low intermediate frequency (IF) using a gain method. The resistive mixer exhibits 10.3-11.2 dB lower NF than the diode mixer at low IF from 100 kHz to 1 MHz. This result is also supported by the measurement of the flicker noise of HEMT and diode at each operating bias condition. (C) 2016 Wiley Periodicals, Inc.

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