Complete determination of the crystallographic orientation of ReX2 (X = S, Se) by polarized Raman spectroscopy

  • Choi, Yun
  • Kim, Keunui
  • Lim, Soo Yeon
  • Kim, Jungcheol
  • Park, Je Myoung
  • ... Cheong, Hyeonsik
  • 외 2명
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초록

Polarized Raman spectroscopy on few-layer ReS2 and ReSe2 was carried out to determine the crystallographic orientations. Since monolayer ReX2 (X = S or Se) has a distorted trigonal structure with only an inversion center, there is in-plane anisotropy and the two faces of a monolayer crystal are not equivalent. Since many physical properties vary sensitively depending on the crystallographic orientation, it is important to develop a reliable method to determine the crystal axes of ReX2. By comparing the relative polarization dependences of some representative Raman modes measured with three different excitation laser energies with high-resolution scanning transmission electron microscopy, we established a reliable procedure to determine all three principal directions of few-layer ReX2, including a way to distinguish the two types of faces: a 2.41 eV laser for ReS2 or a 1.96 eV laser for ReSe2 should be chosen as the excitation source of polarized Raman measurements; then the relative directions of the maximum intensity polarization of the Raman modes at 151 and 212 cm(-1) (124 and 161 cm(-1)) of ReS2 (ReSe2) can be used to determine the face types and the Re-chain direction unambiguously.

키워드

FEW-LAYER RES2ATOMICALLY THINCRYSTAL-STRUCTUREPHASE DIFFERENCERHENIUMTRANSITIONDEPENDENCESCATTERINGSEMICONDUCTORANISOTROPY
제목
Complete determination of the crystallographic orientation of ReX2 (X = S, Se) by polarized Raman spectroscopy
저자
Choi, YunKim, KeunuiLim, Soo YeonKim, JungcheolPark, Je MyoungKim, Jung HwaLee, ZonghoonCheong, Hyeonsik
DOI
10.1039/c9nh00487d
발행일
2020-02-01
유형
Article
저널명
Nanoscale horizons
5
2
페이지
308 ~ 315