10-Gbps InAlAs/InGaAs superlattice avalanche photodiodes

초록

In this paper we report a method of dark current reduction in InAlAs/InGaAs superlattice avalanche photodiodes (SL-APDs). We have fabricated a mesa-type SL-APD for 10-Gbps application. Two sets: of samples were fabricated using benzocyclobutene (BCB) and SiNx passivations, and the dark current characteristics were compared. Extracting the surface dark currents for the two samples, we obtained the surface dark current of 6.3 nA for the BCB-passivated sample and 0.3 muA for the SiNx-passivated sample. The measured 3-dB handwidth of the 30-mum mesa APD was 8.3 GHz.

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