6.5% Certified Efficiency Sb2Se3 Solar Cells Using PbS Colloidal Quantum Dot Film as Hole-Transporting Layer

초록

Sb2Se3 is a promising candidate for thin-film photovoltaics, with a suitable band gap, benign grain boundaries, Earth-abundant and nontoxic constituents, and excellent stability. However, the low doping density (1013 cm(-3)) of Sb2Se3 absorber and back contact barrier limit its efficiency. Here we introduced a PbS colloidal quantum dot (CQD) film as the hole -transporting layer (HTL) to construct a n-i-p configured device and overcame these problems. Through simulation-guided optimization, we have significantly improved the efficiency of a Sb,Se-3 thin-fihn solar cell to a new certified record of 6.5%. The PbS CQD HTL not only minimized carrier recombination loss at the back contact and boosted carrier collection efficiency but also contributed photocurrent by its own near infrared absorption. Furthermore, these n-i-p devices also demonstrated improved device uniformity, achieving 6.39% in a 1.02 cm(2) device.

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