Raman Signatures of Polytypism in Molybdenum Disulfide

  • Lee, Jae-Ung
  • Kim, Kangwon
  • Han, Songhee
  • Ryu, Gyeong Hee
  • Lee, Zonghoon
  • ... Cheong, Hyeonsik
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초록

Since the stacking order sensitively affects various physical properties of layered materials, accurate determination of the stacking order is important for studying the basic properties of these materials as well as for device applications. Because 2H-molybdenum disulfide (MoS2) is most common in nature, most studies so far have focused on 2H-MoS2. However, we found that the 2H, 3R, and mixed stacking sequences exist in few-layer MoS2 exfoliated from natural molybdenite crystals. The crystal structures are confirmed by HR-TEM measurements. The Raman signatures of different polytypes are investigated by using three different excitation energies that are nonresonant and resonant with A and C excitons, respectively. The low-frequency breathing and shear modes show distinct differences for each polytype, whereas the high-frequency intralayer modes show little difference. For resonant excitations at 1.96 and 2.81 eV, distinct features are observed that enable determination of the stacking order.

키워드

molybdenum disulfideMoS23R stackingRaman spectroscopyHR-TEMTRANSITION-METAL DICHALCOGENIDESBAND-GAPLAYER GRAPHENEBULK MOS2PHONONMODESABCMULTILAYERGENERATIONSCATTERING
제목
Raman Signatures of Polytypism in Molybdenum Disulfide
저자
Lee, Jae-UngKim, KangwonHan, SongheeRyu, Gyeong HeeLee, ZonghoonCheong, Hyeonsik
DOI
10.1021/acsnano.5b05831
발행일
2016-02
유형
Article
저널명
ACS Nano
10
2
페이지
1948 ~ 1953