Growth behavior and optical properties of In-rich InGaN quantum dots by metal-organic chemical vapor deposition

초록

We successfully grew In-rich In0.8Ga0.2N/GaN quantum dots (QDs) by metal-organic chemical vapor deposition. We obtained uniform QDs with density of 1.3 x 10(10) /cm(2) by optimizing growth conditions. Strong photoluminescence (PL) emission from In-rich InGaN/GaN QDs was observed at room temperature and emission wavelength was varied from 404 nm to 454 nm depending on QD size. It is strongly suggested that QDs leads to higher radiative recombination efficiency from temperature-dependent PL measurement.

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