Improved breakdown voltage and output conductance characteristics of GaAs pHEMTs using composite gate fabricated by digital recess method

초록

In this paper, we report a new technique to enhance breakdown voltages and output conductances of AlGaAs/InGaAs/GaAs pHEMTs. This structure used field plate (FP) in the form of composite gate. Composite gate was fabricated using digital recess method. A breakdown voltage of a single gate device was 6.4 V and output conductances were 17 mS/mm. The proposed structure with composite gate achieved 9.8 V breakdown voltage and 5.5 mS/mm output conductances.

키워드