Pentacene organic thin-film transistors with post-annealing treatments

초록

In this research, we treated the pentacene OTFTs (organic thin film transistors) with postannealing process after deposition. The thicknesses of the pentacene thin films and the postannealing temperatures were 15 nm, 70 nm, 200 nm and RT (room temperature), 70 °C, 100 °C, 130 °C, 160 °C, respectively. The crystalline structures of the pentacene organic thin films were observed by using X-ray diffraction and atomic force microscopy. For pentacene OTFTs, we found that the traps at the pentacene thin films coexist with the bulk and that the thin-films phases prevent any improvement of the electrical properties. The mobility of the pentacene OTFT with a film thickness of 15 nm was recorded as the highest one, and the mobility of the pentancene OTFT treated at a post-annealing temperature of 70 °C was recorded as 0.0151 cm2/V·s, which was the highest value for the post-annealing process.