WOx-driven growth of 2H-and 3R-WS2 multilayers by physical vapor deposition

초록

Transition metal dichalcogenides (TMDs), including MoS2 and WS2, exhibit distinct optical and electrical properties that are highly dependent on their thickness and stacking order. However, controlling these parameters during synthesis remains a challenge. Here, we present a synthesis technique for multilayer single-crystal tungsten disulfide (WS2) utilizing a liquid-phase tungsten oxide (WOx)-driven physical vapor deposition (PVD) method. Our approach successfully addresses the challenges of manipulating the stacking order in TMD multilayers, which is vital for harnessing their unique properties for advanced technological applications. By employing a molten WOx intermediate, we achieved controlled growth of WS2 single crystals with varied layer numbers and stacking configurations of 2H and 3R. This method not only facilitates the fabrication of TMD layers beyond monolayers but also provides the ability to tailor their stacking orders. Our findings offer a pathway for the growth of multilayer TMDs, underscoring the potential for scalable production of high-quality single-crystal TMDs for industrial use.

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