Effects of metal electrodes on the performance of vertical type organic thin film transistor using C60

초록

Vertical type organic thin film transistor (OTFT) using organic semiconductor such as C-60 was fabricated. C-60 shows n-type semiconducting property and has relatively high electron mobility. Vertical type OTFT using n-type active material has a layered structure of ITO(drain)/C-60/metal(gate)/C-60/metal(source). The semiconductor layers and electrodes of OTFTs were deposited by vacuum evaporation technique. The static characteristics of the fabricated OTFTs were investigated. Especially, the effects of C-60 layer thickness, source electrode and gate electrode on the performance of vertical type OTFTs were studied.

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