A Gate Delay Model Considering Temporal Proximity of Multiple Input Switching

초록

Conventional cell characterization does not consider Multiple Input Switching (MIS). Since the impact of MIS on gate delay variation is large, it is not possible to predict the accurate gate delay with the conventional cell characterization. We observed maximum 46% difference in gate delay due to MIS. In this paper, we propose a gate delay model considering the delay variation caused by temporal proximity of MIS. The proposed model calculates the delay variation using the Radial Basis Function (RBF). The experimental results show that the proposed method can more accurately predict gate delay when MIS occurs.

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