Multi-Stage Reconfigurable RF-DC Converter With Deep-n-Well Biasing Using Body-Isolated MOSFET in 180-nm BCDMOS Process

초록

This brief proposes a multi-stage RF-DC converter using body isolation MOSFET with self-biasing at deep- n -well of NMOS. Deep- n -wells of NMOSs are connected to final stage DC voltage of multi-stage rectifier to apply highest reverse bias for minimizing the leakage current by the body diode formed between p -well and deep- n -well in NMOSs. The deep- n -well biasing contributes to preserving charges collected in the body and results in improving output voltage and power conversion efficiency when multi-stage rectifiers are connected in series. The proposed circuit is fabricated in a 180-nm BCDMOS process with the chip area of 1.24 mm(2). A maximum power conversion efficiency of 57% was obtained at an input of 1-dBm and the output voltage was about 1.4 V at 915MHz RF input. The minimum operating input power is about -10dBm.

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