Oxygen vacancy induced re-entrant spin glass behavior in multiferroic ErMnO3 thin films

Jang, S. Y.; Lee, D.; Lee, J. -H.; Noh, T. W.; Jo, Y.; Jung, M. -H.; Chung, J. -S.

doi:10.1063/1.3006325

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Oxygen vacancy induced re-entrant spin glass behavior in multiferroic ErMnO3 thin films

Jang, S. Y.;
Lee, D.;
Lee, J. -H.;
Noh, T. W.;
Jo, Y.;
... Jung, M. -H.;
외 1명

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25

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26

초록

Epitaxial thin films of hexagonal ErMnO3 fabricated on Pt(111)/Al2O3(0001) and yttria-stabilized zirconia(111) substrates exhibited both ferroelectric character and magnetic ordering at low temperatures. As the temperature was reduced, the ErMnO3 films first showed antiferromagnetism. At lower temperatures, the films deposited at lower oxygen partial pressures exhibited spin glass behavior. This re-entrant spin glass behavior was attributed to competition between an antiferromagnetic interaction in the hexagonal geometry and a ferromagnetic interaction caused by a change in Mn valence induced by excess electrons from the oxygen vacancies. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3006325]

키워드

MAGNETIC-STRUCTURE; HEXAGONAL HOMNO3; EVOLUTION; PHASE

제목: Oxygen vacancy induced re-entrant spin glass behavior in multiferroic ErMnO3 thin films

저자: Jang, S. Y.; Lee, D.; Lee, J. -H.; Noh, T. W.; Jo, Y.; Jung, M. -H.; Chung, J. -S.

DOI: 10.1063/1.3006325

발행일: 2008-10-20

유형: Article

저널명: Applied Physics Letters

권: 93

호: 16