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Light-induced long-range hydrogen motion in hydrogenated amorphous silicon at room temperature
- Cheong, HM;
- Lee, SH;
- Nelson, BP;
- Mascarenhas, A;
- Deb, SK
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WEB OF SCIENCE
17Citations
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17초록
We present evidence for long-range hydrogen motion in hydrogenated amorphous silicon (a-Si:H) under room-temperature illumination, by monitoring the changes in the Raman spectrum of an a-WO3 overlayer with illumination. We observe that illumination causes hydrogen to diffuse out of the a-Si:H layer into the a-WO3 layer. This hydrogen motion is observed to saturate after about 30 min when the a-Si:H is illuminated with 15 W/cm(2) of the 514.5 nm laser line at room temperature. The amount of hydrogen that diffuses out of the a-Si:H layer is estimated semiquantitatively to be approximately 9x10(-4) at. %. (C) 2000 American Institute of Physics. [S0003-6951(00)02243-9].
키워드
METASTABILITY; DIFFUSION; SI
- 제목
- Light-induced long-range hydrogen motion in hydrogenated amorphous silicon at room temperature
- 저자
- Cheong, HM; Lee, SH; Nelson, BP; Mascarenhas, A; Deb, SK
- 발행일
- 2000-10-23
- 유형
- Article
- 권
- 77
- 호
- 17
- 페이지
- 2686 ~ 2688